高轨卫星平台在轨顽存技术体系

doi:10.12305/j.issn.1001-506X.2021.03.17

摘要/Abstract

摘要：

由于高轨高价值卫星在轨时面临诸多威胁, 探索高轨卫星平台在轨顽存技术体系(technology system of on-orbit strong survivability, TSO²S²)有利于提升平台在轨生存能力。针对这一情况, 系统地定义了TSO²S²内涵, 从分析威胁源出发, 建立以告警和防护为手段的顽存技术体系。首先, 将8种威胁分为被动型和主动型, 分别阐述威胁机理, 采用定性和定量结合的方法分析其损伤效应。其次, 提出天地一体的平台防护方案, 设计兼顾空间碎片、激光等5类威胁的综合告警设备。最后, 系统总结了防护技术方法, 为高轨卫星平台提升在轨安全性提供参考。

关键词: 卫星平台, 损伤效应, 综合告警, 安全防护

Abstract:

As high value geostationary earth orbit (GEO) satellites are under a range of threats, it is helpful to improve the survivability of satellite bus by exploring the technology system of on-orbit strong survivability (TSO²S²). Focusing on this, the concept of TSO²S² is defined systematically. A protection system including warning and safety protection sub-system is built after the main threat sources are figured out. Firstly, 8 threats are divided into active type and passive type. The threat mechanisms are analyzed and the damage effects are evaluated using qualitative and quantitative methods. Secondly, an integrated space and terrestrial warning scheme is proposed and the equipment is designed which enabled 5 types of threats to be alarmed, including space debris, laser, et al. Finally, the protection technology and methods are summarized systematically, which can provide reference for the GEO satellite platform to improve the orbit safety.

Key words: satellite bus, damage effect, composite warning, security protection

中图分类号:

V476.5

李文龙, 孔祥龙, 马伟, 杨丽丽. 高轨卫星平台在轨顽存技术体系[J]. 系统工程与电子技术, 2021, 43(3): 731-739.

Wenlong LI, Xianglong KONG, Wei MA, Lili YANG. Technology system of on-orbit strong survivability for GEO satellite bus[J]. Systems Engineering and Electronics, 2021, 43(3): 731-739.

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卫星部件	损坏情况
包覆部件	热控表面的汽化热控表面光学特性的改变热控结构的变形和失效
结构部件	聚合物结构的汽化复合材料结构的分层铝合金结构的软化或熔化结构变形, 从而引起功能的降低
电气系统	电器绝缘材料的损伤或结构破坏焊点的熔化太阳能电池板和保护板的损伤
光学系统	光学涂层的剥离平面镜和透镜的损伤或畸形由于光学聚焦, 传感器的损伤

材料	能量密度阀值估算/(J/cm²)			30 s破坏功率密度阀值/(W/cm²)
材料	1.064 μm	1.315 μm	3.8 μm	1.064 μm	1.315 μm	3.8 μm
(c/e)T300	52	52	57	3.8	3.8	4
(c/e)M55J	54	54	60	4	4	4.2
玻璃钢	290	290	250	15.2	15.2	13.9
聚酰亚胺	4 110	4 110	2 350	136.9	136.9	78.2
砷化镓	220	290	1130	7.4	9.5	37.6
2 024铝合金	30 300	30 300	35 800	1 007.9	1 007.9	1163
Hg0.8Cd0.2Te	17.6	17.6	17.6	0.59	0.59	0.59
Si	70	70	6 150	2.3	2.3	204.7

敏感器材料	增益	1.064 μm	1.315 μm	3.8 μm
Hg0.8Cd0.2Te	10⁴	0.59E-4	0.59E-4	0.59E-4
Hg0.8Cd0.2Te	10⁶	0.59E-6	0.59E-6	0.59E-6
Si	10⁴	2.3E-4	2.3E-4	2.3E-4
Si	10⁶	2.3E-6	2.3E-6	2.3E-6

D/cm	P=100 MW			P=10 MW			P=1 MW
D/cm	1.064 μm	1.315 μm	3.8 μm	1.064 μm	1.315 μm	3.8 μm	1.064 μm	1.315 μm	3.8 μm
10	4.8E-4	4.2E-4	8.5E-5	4.8E-5	4.2E-5	8.5E-6	4.8E-6	4.2E-6	8.5E-7
50	0.012	0.01	0.002	1.2E-3	1E-3	2E-4	1.2E-4	1E-4	2E-5
100	0.047	0.042	8.5E-3	4.7E-3	4.2E-3	8.5E-4	4.7E-4	4.2E-4	8.5E-5
150	0.11	0.093	0.019	0.011	9.3E-3	1.9E-3	1.1E-3	9.3E-4	1.9E-4

敏感器材料	损伤情况	损伤阀值/(W/cm²)
微波混频器二极管	烧毁	10^-7
线形集成电路	干扰、烧毁	10^-6
小功率管、双极集成电路	干扰、烧毁	10^-5
CMOS逻辑、中功率管等	永久破坏	10^-4
大功率管、薄膜电阻等	受到破坏	10^-3