基于焊层裂纹扩展的IGBT性能退化建模与分析

doi:10.12305/j.issn.1001-506X.2024.09.15

系统工程与电子技术 ›› 2024, Vol. 46 ›› Issue (9): 3031-3039.doi: 10.12305/j.issn.1001-506X.2024.09.15

基于焊层裂纹扩展的IGBT性能退化建模与分析

康锐¹^,², 陈玉冰¹^,², 文美林²^,*, 张清源¹, 祖天培¹

1. 杭州市北京航空航天大学国际创新研究院, 浙江杭州 311115
2. 北京航空航天大学可靠性与系统工程学院, 北京 100191

收稿日期:2024-06-07 出版日期:2024-08-30 发布日期:2024-09-12
通讯作者: 文美林
作者简介:康锐 (1966—), 男, 教授, 博士研究生导师, 硕士, 主要研究方向为确信可靠性理论与方法、可靠性系统工程
陈玉冰 (1996—), 男, 博士研究生, 主要研究方向为确信可靠性理论与方法、IGBT可靠性评估方法
文美林 (1980—), 女, 副教授, 博士, 主要研究方向为确信可靠性理论与方法、不确定理论及规划
张清源 (1993—), 男, 副教授, 博士, 主要研究方向为确信可靠性理论与方法、不确定性量化、可靠性正向设计
祖天培 (1993—), 女, 副教授, 博士, 主要研究方向为确信可靠性理论与方法、多源数据融合方法
基金资助:
国家自然科学基金(62073009)

Modeling and analysis of IGBT performance degradation based on solder layer crack propagation

Rui KANG¹^,², Yubing CHEN¹^,², Meilin WEN²^,*, Qingyuan ZHANG¹, Tianpei ZU¹

1. Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
2. School of Reliability and Systems Engineering, Beihang University, Beijing 100191, China

Received:2024-06-07 Online:2024-08-30 Published:2024-09-12
Contact: Meilin WEN

摘要/Abstract

摘要：

在疲劳载荷作用下, 绝缘栅双极型晶体管(insulated gate bipolar transistor, IGBT)会发生结构损伤与性能退化, 影响电力电子系统可靠性。对此, 首先基于传热学理论推导焊层疲劳裂纹长度与热阻的关系, 并以Darveaux模型表征IGBT焊层裂纹演化规律, 提出一种IGBT性能退化模型及其待定系数的估计方法。其次, 考虑实际工况的非平稳特征, 利用响应面法建立IGBT变幅疲劳载荷模型, 并基于雨流计数法与线性累积损伤准则实现IGBT性能退化量的评估。最后, 以一款IGBT产品为例, 实施功率循环试验, 基于试验数据开展性能退化建模与分析, 验证了模型与算法的有效性。

关键词: 绝缘栅双极型晶体管, 退化建模, 退化分析, 焊层疲劳

Abstract:

Under fatigue load, insulated gate bipolar transistor (IGBT) experience structural damage and performance degradation, impacting the reliability of power electronic systems. To address this, the relationship between solder layer fatigue crack length and thermal resistance is derived based on heat transfer theory, firstly. The Darveaux model is used to characterize the evolution law of solder layer cracks in IGBT, and a new IGBT performance degradation model along with a method for estimating its undetermined coefficients is proposed. Then, considering the non-stationary characteristics of actual working conditions, a variable amplitude fatigue load model for IGBT is established using the response surface methodology. The rainflow counting method and linear cumulative damage criterion are then employed to assess the extent of IGBT performance degradation. Finally, using a type of IGBT product as an example, power cycling tests are conducted, and performance degradation modeling and analysis are carried out based on experimental data, verifying the effectiveness of the models and algorithms.

Key words: insulated gate bipolar transistor (IGBT), degradation modelling, degradation analysis, solder layer fatigue

中图分类号:

TB114.3

康锐, 陈玉冰, 文美林, 张清源, 祖天培. 基于焊层裂纹扩展的IGBT性能退化建模与分析[J]. 系统工程与电子技术, 2024, 46(9): 3031-3039.

Rui KANG, Yubing CHEN, Meilin WEN, Qingyuan ZHANG, Tianpei ZU. Modeling and analysis of IGBT performance degradation based on solder layer crack propagation[J]. Systems Engineering and Electronics, 2024, 46(9): 3031-3039.

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参考文献 30

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应力	概率分布函数
负载电流/A	N(33.622 7, 5.589 6)
开关频率/kHz	N(2.602 8, 0.790 2)

参数	取值
开通时间/s	5
关断时间/s	5
负载电流/A	50
栅极-发射极电压/V	±15
水冷板温度/℃	50

样本	初始热阻/(K/W)	10×10⁴次循环后热阻/(K/W)	20×10⁴次循环后热阻/(K/W)
IGBT-1	0.378 3	0.380 7	0.405 4
IGBT-2	0.383 1	0.410 8	0.420 5
IGBT-3	0.385 5	0.393 1	0.441 0
IGBT-4	0.399 6	0.412 6	0.425 1

样本	N₀	ΔT/℃
IGBT-1	1 850	51.44
IGBT-2	150	54.20
IGBT-3	250	53.44
IGBT-4	350	54.43

样本	ΔT₁/℃	ΔT₂/℃
IGBT-1	52.03	52.52
IGBT-2	55.07	55.33
IGBT-3	54.12	54.50
IGBT-4	55.09	56.42

基于焊层裂纹扩展的IGBT性能退化建模与分析

Modeling and analysis of IGBT performance degradation based on solder layer crack propagation

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图/表 17

参考文献 30

相关文章 7

编辑推荐

Metrics

本文评价

样本	ΔT/℃	相对热阻增长率
IGBT-1	0.1	0
IGBT-2	0.1	0
IGBT-3	0.1	0
IGBT-4	0.1	0

序号	开关频率/kHz	负载电流/A	结温响应/℃
1	2.25	56.027	87.33
2	3.80	18.220	51.04
3	0.70	18.220	49.64
4	2.25	14.783	49.44
5	0.39	35.405	72.29
6	0.70	52.590	92.26
7	4.11	35.405	65.98
8	2.25	35.405	65.54
9	3.80	52.590	85.59

模型形式	序贯p值	修正R²	预测R²
线性	＜0.000 1	0.977 9	0.963 5
二次多项式	0.489 8	0.976 2	0.942 5
三次多项式	0.291 5	0.982 5	0.945 2

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